PSMN6R4-30MLD Datasheet PDF (N-channel MOSFET) | Download nexperia PSMN6R4-30MLD

PSMN6R4-30MLD - N-channel MOSFET

Description

Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package.

Features

Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies.
Superfast switching with soft-recovery; s-factor > 1.
Low spiking and ringing for low EMI designs.
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C.
Optimised for 4.5 V gate drive.
Low parasitic inductance and resistance.
High reliability clip bonded and solder die attach Mini Power SO8 package;.

Datasheet Details

Part number	PSMN6R4-30MLD
Manufacturer	nexperia
File Size	288.01 KB
Description	N-channel MOSFET
Datasheet	PSMN6R4-30MLD Datasheet
Additional preview pages of the PSMN6R4-30MLD datasheet.

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Full PDF Text Transcription

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PSMN6R4-30MLD N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 21 January 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia’s unique “SchottkyPlus” technology, delivers high efficiency and the low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like body diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2.

Published: Jul 28, 2019 |