PSMN6R4-30MLD Datasheet | Nexperia

description Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The Next Power S3 portfolio, utilising Nexperia’s unique “Schottky Plus” technology, delivers high efficiency and the low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like body diode but without problematic high leakage current. Next Power S3 is particularly suited to high efficiency applications at high switching frequencies. 2. Features and benefits - Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies - Superfast switching with soft-recovery; s-factor > 1 - Low spiking and ringing for low EMI designs - Unique “Schottky Plus” technology; Schottky-like performance with < 1 µA leakage at 25 °C - Optimised for 4.5 V gate drive - Low parasitic inductance and resistance - High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C - Exposed leads for optimal visual solder inspection 3. Applications - On-board DC-to-DC solutions for server and telemunications - Secondary-side synchronous rectification in telemunication applications - Voltage regulator modules (VRM) - Point-of-Load (POL) modules - Power delivery for V-core, ASIC, DDR, GPU, VGA and system ponents - Brushed and brushless motor control 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 4.5 V; ID = 15 A; Tj = 25 °C; Fig. 10 ID = 15 A; VDS = 15 V; VGS = 4.5 V; Fig. 12; Fig. 13 Min Typ Max Unit - - 30 V - - 66 A - - 51 W - 6.9 8.3 mΩ - 1.8 3 n C Nexperia N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using Next Power S3...