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PSMN8R7-100YSF - N-channel MOSFET

General Description

NextPower 100 V standard level gate drive MOSFET.

Qualified to 175 °C and recommended for industrial & consumer applications.

2.

Key Features

  • Low Qrr for higher efficiency and lower spiking.
  • Qualified to 175 °C.
  • Low QG x RDSon FOM for high efficiency switching.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PSMN8R7-100YSF NextPower 100 V, 9 mΩ N-channel MOSFET in LFPAK56 package 1 November 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial & consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • Qualified to 175 °C • Low QG x RDSon FOM for high efficiency switching applications • Strong avalanche energy rating (Eas) • Avalanche rated and 100% tested • Ha-free and RoHS compliant LFPAK56 package • Wave-solderable LFPAK56 package 3. Applications • Synchronous rectifier in AC-DC and DC-DC • BLDC motor control • USB-PD and mobile fast-charge adapters • LED lighting • Full-bridge and half-bridge applications • Flyback and resonant topologies 4.