Datasheet Summary
N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in
LFPAK56 using NextPowerS3 technology
11 January 2019
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated to 300 A, optimized for DC load switch and hot-swap applications.
2. Features and benefits
- 100% avalanche tested at I(AS) = 190 A
- Optimized for low RDSon
- Low leakage < 1 µA at 25 °C
- Low spiking and ringing for low EMI designs
- Optimized for 4.5 V gate drive
- Copper-clip for low parasitic inductance and resistance
- High reliability LFPAK package,...