Datasheet Summary
N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in
LFPAK56E using NextPower-S3 Schottky-Plus technology
26 April 2019
Product data sheet
1. General description
300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
2. Features and benefits
- 300 A continuous ID(max)
- Avalanche rated, 100% tested
- NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
- Low QRR, QG and QGD for high system efficiency and low EMI designs
- Schottky-Plus body-diode, gives...