onsemi 2N2222
NPN Amplifier Transistor
| Part No. | 2N2222 |
|---|---|
| Datasheet | 2N2222 Download |
| Manufacturer |  onsemi |
| Description | NPN Amplifier Transistor |
| Buy | Stock & Price |
FEATURES
● These are Pb−Free Devices*MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector −Emitter Voltage VCEO 40 Collector −Base Voltage VCBO 75 Emitter−Base Voltage VEBO 6.0 Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C IC 600 PD 625 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to °C +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. COLLECTOR 1 2 BASE 3 EMITTER TO−92 CASE 29 STYLE 17 123 STRAI...
