onsemi 2N3439
Low Power Transistor
| Part No. | 2N3439 |
|---|---|
| Datasheet | 2N3439 Download |
| Manufacturer |  onsemi |
| Description | Low Power Transistor |
| Buy | Stock & Price |
FEATURES
● MIL−PRF−19500/368 Qualified● Available as JAN, JANTX, and JANTXV
● Hermetically Sealed Commercial Product with Option for Military Temperature Range Screening
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector −Emitter Voltage VCEO 350 Collector −Base Voltage Emitter −Base Voltage VCBO VEBO 450 7.0 Collector Current − Continuous IC 1.0 Total Device Dissipation @ TA = 25°C PT 800 Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range PT TJ, Tstg 5.0 −65 to +200 Unit Vdc Vdc Vdc Adc mW W °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 175 °C/W Thermal Resistance, Junction to Case RqJC 30 °C/W Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
