onsemi 2N5038
NPN Silicon Transistors
FEATURES
●ăHigh Speed - tf = 0.5 ms (Max)●ăHigh Current - IC(max) = 30 Amps
●ăLow Saturation - VCE(sat) = 2.5 V (Max) @ IC = 20 Amps
●ăPb-Free Package is Available*
MAXIMUM RATINGS
(Note 1) Rating Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak (Note 2) Base Current - Continuous Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VCEV VEBO IC ICM IB PD TJ, Tstg Value 90 Unit Vdc 150 Vdc 150 Vdc 7 Vdc 20 Adc 30 5 Adc 140 W 0.8 W/_C -ā65 to +200 _C THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction-to-Case RqJC 1.25 _C/W Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data.