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TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/439 Devices 2N5038 2N5039 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range
Symbol
VCEO VCBO VEBO IB IC PT Top, Tstg
2N5038
90 150
2N5039
75 125
Units
Vdc Vdc Vdc Adc Adc W
0
7.0 5.0 20 140 -65 to +200 Max. 1.25
C
THERMAL CHARACTERISTICS
Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 800 mW/0C for TC > +250C
0
Unit C/W
TO-3* (TO-204AA)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max.
2N5038 Datasheet
