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2N5039 - NPN HIGH POWER SILICON TRANSISTOR

Download the 2N5039 datasheet PDF. This datasheet also covers the 2N5038 variant, as both devices belong to the same npn high power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N5038_Microsemi.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/439 Devices 2N5038 2N5039 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IB IC PT Top, Tstg 2N5038 90 150 2N5039 75 125 Units Vdc Vdc Vdc Adc Adc W 0 7.0 5.0 20 140 -65 to +200 Max. 1.25 C THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 800 mW/0C for TC > +250C 0 Unit C/W TO-3* (TO-204AA) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max.