onsemi 2N5039
NPN SILICON POWER TRANSISTORS
| Part No. | 2N5039 |
|---|---|
| Datasheet | 2N5039 Download |
| Manufacturer |  onsemi |
| Description | NPN SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Symbol VCBO VCEV IC ICM IB VEBO 2N5038 150 150 2N5039 120 120 Unit Vdc Vdc Vdc Adc Adc Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage 7 Collector Current — Continuous Peak (1) Base Current — Continuous 20 30 5 Total Device Dissipation @ TC = 25_C Derate above 25_C PD 140 0.8 Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 200 _C THERMAL CHARACTERISTICS Characteristic Symbol RθJC Max Unit Thermal Resistance, Junction to Case 1.25 _C/W * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 10 ms, Duty Cycle 50%. VCC + 30 V RC 2.5 +11 V 0 –9 V 1N4933 –5 V 10 Ω PW = 20 µs DUTY CYCLE = 1% 2N5038 IC = 12 AMPS IB1 = IB2 = 1.2 AMPS 2N5039 IC = 10 AMPS IB1 = IB2 = 1.0 AMPS Figure 1. Switching Time Test Circuit Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2N5...
