2N5039 Datasheet | Central Semiconductor

DESCRIPTION : The CENTRAL SEMICONDUCTOR 2N5038 and 2N5039 are silicon NPN power transistors designed for power amplifier and power oscillator applications where high current, high voltage, and fast switching speeds are required. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEX VCER VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N5038 150 2N5039 120 -65 to +200 UNITS V V V V V A A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N5038 SYMBOL TEST CONDITIONS MIN MAX ICEV ICEV ICEV ICEV ICEO ICEO IEBO IEBO BVCEX BVCER BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) VBE(ON) h FE h FE h FE VCE=140V, VBE=1.5V VCE=110V, VBE=1.5V VCE=100V, VBE=1.5V, TC=150°C VCE=85V, VBE=1.5V, TC=150°C VCE=70V VCE=55V VEB=5.0V VEB=7.0V IC=200m A, VBE=1.5V IC=200m A, RBE≤50Ω IC=200m A IE=50m A IC=12A, IB=1.2A IC=10A, IB=1.0A IC=20A, IB=5.0A IC=20A, IB=5.0A VCE=5.0V, IC=12A VCE=5.0V, IC=10A VCE=5.0V, IC=2.0A VCE=5.0V, IC=10A VCE=5.0V, IC=12A - 50 - - - 10 - - - 20 - - - 5.0 - 50 -...