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2N5039 - NPN High Power Silicon Transistor

Download the 2N5039 datasheet PDF. This datasheet also covers the 2N5038 variant, as both devices belong to the same npn high power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/439.
  • TO-3 (TO-204AA) Package.
  • Ideal for Use in Switching Regulators, Inverters, Power Amplifiers and Oscillators Rev. V3 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = 2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5038-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5039
Manufacturer VPT
File Size 389.33 KB
Description NPN High Power Silicon Transistor
Datasheet download datasheet 2N5039 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N5038 & 2N5039 NPN High Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/439 • TO-3 (TO-204AA) Package • Ideal for Use in Switching Regulators, Inverters, Power Amplifiers and Oscillators Rev. V3 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = 200 mA dc, 2N5038 IC = 200 mA dc, 2N5039 VCE = 150 V dc, 2N5038 VCE = 125 V dc, 2N5039 VEB = 5.0 V dc V(BR)CEO V dc ICBO µA dc IEBO µA dc VCE = 100 V dc, VBE = -1.5 V dc, 2N5038 VCE = 85 V dc, VBE = -1.