onsemi 2N5088
Amplifier Transistor
FEATURES
● Pb−Free Packages are Available* 3 COLLECTOR 2 BASE 1 EMITTERMAXIMUM RATINGS
Rating Collector − Emitter Voltage 2N5088 2N5089 Collector − Base Voltage 2N5088 2N5089 Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 35 30 3.0 50 625 5.0 1.5 12 −55 to +150 Vdc mAdc mW mW/°C W mW/°C °C Symbol VCEO 30 25 Vdc TO−92 CASE 29 STYLE 1 Value Unit Vdc 3 STRAIGHT LEAD BULK PACK 12 1 3 BENT LEAD TAPE & REEL AMMO PACK 2 MARKING DIAGRAM 2N 508x AYWW G G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient (Note 1) Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.