onsemi 2N5195
Silicon PNP Power Transistors
| Part No. | 2N5195 |
|---|---|
| Datasheet | 2N5195 Download |
| Manufacturer |  onsemi |
| Description | Silicon PNP Power Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC IB 2N5194 60 60 2N5195 80 80 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Base Current 5.0 4.0 1.0 Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 40 320 Watts mW/_C _C/W TJ, Tstg –65 to +150 3 2 1 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE 4 AMPERE POWER TRANSISTORS SILICON PNP 60–80 VOLTS THERMAL CHARACTERISTICS Characteristic Symbol θJC Max Unit CASE 77–09 TO–225AA TYPE Thermal Resistance, Junction to Case 3.12 _C/W *ELECTRICAL CHARACTERISTICS
(TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector–Emitter Sustaining Voltage (1) (IC = 0.1 Adc, IB = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) VCEO(sus) Vdc 2N5194 2N5195 60 80 — — — — — — — — — — — ICEO mAdc 2N5194 2N5195 1.0 1.0 0.1 0.1 2.0 2.0 0.1 0.1 1.0 Collector Cutoff Current (VCE = 60...
