onsemi 2N5457
N-Channel MOSFET
FEATURES
1 DRAIN●
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● N−Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low Transfer and Input Capacitance Low Cross−Modulation and Intermodulation Distortion Unibloc Plastic Encapsulated Package Pb−Free Packages are Available* 3 GATE 2 SOURCE MARKING DIAGRAM
MAXIMUM RATINGS
Rating Drain −Source Voltage Drain −Gate Voltage Reverse Gate −Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Storage Temperature Range Symbol VDS VDG VGSR IG PD TJ Tstg Value 25 25 −25 10 310 2.82 135 −65 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C °C °C 12 3 TO−92 CASE 29 STYLE 5 2N 545x AYWWG G Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2N545x = De...