onsemi 2N5550
Amplifier Transistor
| Part No. | 2N5550 |
|---|---|
| Datasheet | 2N5550 Download |
| Manufacturer |  onsemi |
| Description | Amplifier Transistor |
| Buy | Stock & Price |
FEATURES
● These are Pb−Free Devices*MAXIMUM RATINGS
Rating Collector − Emitter Voltage Symbol 2N5550 2N5551 VCEO Value 140 160 Unit Vdc Collector − Base Voltage VCBO Vdc 2N5550 160 2N5551 180 Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 6.0 Vdc 600 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. COLLECTOR 3 2 BASE 1 EMITTER TO−92 CASE 29 STYLE 1 123 STRAIGH...
