onsemi 2N5686
NPN Transistor
| Part No. | 2N5686 |
|---|---|
| Datasheet | 2N5686 Download |
| Manufacturer |  onsemi |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
●ăHigh Current Capability - IC Continuous = 50 Amperes●ăDC Current Gain - hFE = 15ā-ā60 @ IC = 25 Adc
●ăLow Collector-Emitter Saturation Voltage - ąVCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc
●ăPb-Free Packages are Available*
MAXIMUM RATINGS
(Note 1) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C Symbol VCEO VCB VEB IC IB PD Value 80 80 5.0 50 15 300 1.715 Unit Vdc Vdc Vdc Adc Adc mW mW/°C Operating and Storage Temperature Range TJ, Tstg -ā65 to +ā200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Case qJC 0.584 °C/W Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data.
