onsemi 2N6283
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
| Part No. | 2N6283 |
|---|---|
| Datasheet | 2N6283 Download |
| Manufacturer |  onsemi |
| Description | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Symbo l VCEO VCB VEB IC IB These devices are available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative. 2N6283 2N6286 80 80 2N6284 2N6287 100 100 Unit Vdc Vdc Vdc Adc Adc Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage 5.0 20 40 Collector Current − Continuous Peak Base Current 0.5 CASE 1−07 TO−204AA (TO−3) Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 160 0.915 Watts W/_C _C TJ,Tstg − 65 to + 200 *THERMAL CHARACTERISTICS Characteristic Symbol RθJC Max Unit Thermal Resistance, Junction to Case *Indicates JEDEC Registered Data. 1.09 _C/W 160 PD, POWER DISSIPATION (WATTS) 140 120 100 80 60 40 20 0 0 25 75 150 50 100 125 TC, CASE TEMPERATURE (°C) 1 175 200 Figure 1. Power Derating © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev.
