onsemi 2N6287
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
| Part No. | 2N6287 |
|---|---|
| Datasheet | 2N6287 Download |
| Manufacturer |  onsemi |
| Description | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
● High DC Current Gain @ IC = 10 Adc − hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287● Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min)
● Monolithic Construction with Built−In Base−Emitter Shunt Resistors
● Pb−Free Packages are Available*
MAXIMUM RATINGS
(Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6286 VCEO 80 Vdc 2N6284/87 100 Collector−Base Voltage VCB Vdc 2N6286 80 2N6284/87 100 Emitter−Base Voltage Collector Current − Continuous Peak VEB 5.0 Vdc IC 20 Adc 40 Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C IB PD 0.5 160 0.915 Adc W W/°C Operating and Storage Temperature Range TJ, Tstg − 65 to + 200 °C THERMAL CHARACTERISTICS (Note 1) Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.09 °C/W Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
