onsemi 2N6341
High-Power NPN Silicon Transistors
| Part No. | 2N6341 |
|---|---|
| Datasheet | 2N6341 Download |
| Manufacturer |  onsemi |
| Description | High-Power NPN Silicon Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Peak ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ @ TC = 25_C Derate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Junction Temperature Range Symbol VCB VCEO VEB IC IB PD TJ, Tstg 2N6338 2N6341 120 180 100 150 6.0 25 50 10 200 1.14 – 65 to + 200 Unit Vdc Vdc Vdc Adc Adc W W/°C _C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case θJC 0.875 _C/W ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Indicates JEDEC Registered Data.
