onsemi 2SA1415
The 2SA1415/2SC3645 are classified by 10mA hFE as follows : Rank S T hFE 140 to 280 200 to 400 Package Dimensions unit : mm (typ) 7007A-004 Top View 4.5 1.6 1.5 1.0 2.5 4.0 1 0.4 2 0.5 1.5 3.0 3 0.4 Switching Time Test Circuit IB1 3kΩ IB2 IN OUT 5kΩ 2kΩ 50Ω ++ 1µF 1µF --2V 20V IC=10IB1=--10IB2=10mA For PNP, the polarity is reversed.| Part No. | 2SA1415 |
|---|---|
| Datasheet | 2SA1415 Download |
| Manufacturer |  onsemi |
| Description | PNP / NPN Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● Adoption of FBET process.● High breakdown voltage (VCEO=160V).
● Excellent linearity of hFE and small Cob.
● Fast switching speed.
● Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs. Specifications ( ) : 2SA1415
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Marking : 2SA1415 : AA, 2SC3645: CA Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Moutned on ceramic board (250mm2✕0.8mm) Ratings (--)180 (--)160 (--)5 (--)140 (--)200 500 1.3 150 --55 to +150 Unit V V V mA mA mW W °C °C © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Rev.0 I Pwagwew1.oofn5seImwiw.cwo.omnsemi.com Publication Order Number: 2SA1415_2SC3645/D 2SA1415 / 2SC3645ELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain G...
