onsemi 2SA1774
PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS
FEATURES
COLLECTOR 3●
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● Reduces Board Space High hFE, 210−460 (typical) Low VCE(sat), < 0.5 V Available in 8 mm, 7−inch/3000 Unit Tape and Reel Pb−Free Packages are Available* 1 BASE 2 EMITTER
MAXIMUM RATINGS
(TA = 25°C) Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value −60 −50 −6.0 −100 Unit Vdc Vdc Vdc mAdc SC−75 CASE 463−01 STYLE 1 1 2 3 THERMAL CHARACTERISTICS Characteristic Power Dissipation (Note 1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 150 150 −55 ~ + 150 Unit mW °C °C MARKING DIAGRAM Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR−4 glass epoxy printed circuit board using the minimum recommended footprint.