onsemi 2SC6082
Bipolar Transistor
APPLICATIONS
● High-speed switching applications (switching regulator, driver circuit)FEATURES
● Adoption of MBIT process● Low collector-to-emitter saturation voltage
● Large current capacitance
● High-speed switching Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current VCBO VCES VCEO VEBO IC ICP IB Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 60 60 50 6 15 20 3 2 23 150 --55 to +150 Unit V V V V A A A W W °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 15.8 3.23 Package Dimensions unit : mm (typ) 7529-002 10.16 3.18 1.47...