onsemi 2SJ661
P-Channel Power MOSFET
FEATURES
● ON-resistance RDS(on)1=29.5mΩ(typ.)● 4V drive Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Package Dimensions unit : mm (typ) 7537-001● Input capacitance Ciss=4360pF (typ.) Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --60 ±20 --38 --152 1.65 65 Unit V V A A W W Continued on next page. Package Dimensions unit : mm (typ) 7535-001 2SJ661-1E 2SJ661-DL-1E 10.0 4.5 8.0 1.3 10.0 4.5 8.0 1.3 4 0.9 1.75 1.4 9.2 1.2 13.4 0.9 1.75 3.0 9.2 1.2 1.35 7.9 7.9 5.3 3.0 1.47 1.27 0.8 0.5 13.08 123 2.54 2.54 2.4 1 : Gate 2 : Drain 3 : Source TO-262-3L Product & Package Information
● Package : TO-262-3L
● JEITA, JEDEC : TO-262
● Minimum Packing Quantity : 50pcs./magazine Marking 1 23 2.54 1.27 0.8 2.54 0 to 0.25 2.4 0.254 5.3 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain TO-263-2L
● Package : TO-263-2L
● JEITA, JEDEC : SC-83, TO-263
● Minimum Packing Quantity : 800pcs./reel Packing Type : DL Electrical Connection 2, 4 J661 LOT No.