onsemi 2SJ665
P-Channl Silicon MOSFET
| Part No. | 2SJ665 |
|---|---|
| Datasheet | 2SJ665 Download |
| Manufacturer |  onsemi |
| Description | P-Channl Silicon MOSFET |
| Buy | Stock & Price |
FEATURES
● ON-resistance RDS(on)1=59mΩ(typ.)● 4V drive
● Input capacitance Ciss=4200pF (typ.) Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--30V, L=100μH, IAV=--27A (Fig.1) *2 L≤100μH, single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --100 ±20 --27 --108 65 150 --55 to +150 48 --27 Unit V V A A W °C °C mJ A Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7535-001 3.0 10.0 4 1 23 2.54 1.27 0.8 2.54 0 to 0.25 2.4 1.4 9.2 1.2 13.4...
