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30C02MH Datasheet PDF

onsemi 30C02MH

Bipolar Transistor

Part No. 30C02MH
Datasheet 30C02MH Download
Manufacturer
onsemi
Description Bipolar Transistor
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30C02MH datasheet page 1 preview

APPLICATIONS

● Low-frequency Amplifier, high-speed switching, small motor drive

FEATURES

● Large current capacity
● Low collector-to-emitter saturation voltage (resistance)) : RCE(sat) typ=330mΩ [IC=0.7A, IB=35mA]
● Ultrasmall package facilitates miniaturization in end products
● Small ON-resistance (Ron)
● Halogen free compliance Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions When mounted on ceramic substrate (600mm2×0.8mm) Ratings 40 30 5 700 1.4 600 150 -55 to +150 Unit V V V mA A mW °C °C Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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