onsemi BAS35
The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.| Part No. | BAS35 |
|---|---|
| Datasheet | BAS35 Download |
| Manufacturer |  onsemi |
| Description | Small Signal Diode |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VRRM Maximum Repetitive Reverse Voltage 120 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non−Repetitive Pulse Width = 1.0 second 1.0 A Peak Forward Surge Current Pulse Width = 1.0 microsecond 2.0 TSTG Storage Temperature Range −55 to °C +150 TJ Operating Junction Temperature 150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady−state limits. The factory should be consulted on applications involving pulsed or low− duty−cycle operations. THERMAL CHARACTERISTICS Symbol Parameter PD RqJA Power Dissipation Thermal Resistance, Junction−to−Ambient Ratings Unit 350 °C/W 357 3 2 1 SOT−23 CASE 318BM MARKING DIAGRAM 3 L22M 1 2 L22 = Specific D...
