• Part: BAS35
  • Description: General purpose controlled avalanche double diodes
  • Manufacturer: NXP Semiconductors
  • Size: 74.19 KB
Download BAS35 Datasheet PDF
BAS35 page 2
Page 2
BAS35 page 3
Page 3

Datasheet Summary

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche (double) diodes Product data sheet Supersedes data of 2001 Oct 10 2003 Mar 20 NXP Semiconductors General purpose controlled avalanche (double) diodes Product data sheet BAS29; BAS31; BAS35 Features - Small plastic SMD package - Switching speed: max. 50 ns - General application - Continuous reverse voltage: max. 90 V - Repetitive peak reverse voltage: max. 110 V - Repetitive peak forward current: max. 600 mA - Repetitive peak reverse current: max. 600 mA. PINNING DESCRIPTION BAS29 BAS31 1 anode anode cathode (k1) 2 not connected cathode cathode (k2) 3...