onsemi BAT54W
Schottky Barrier Diodes
FEATURES
● Extremely Fast Switching Speed● Extremely Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc
● NSV Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*
MAXIMUM RATINGS
(TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C VR 30 V PF 200 mW 2.0 mW/°C Forward Current (DC) Non−Repetitive Peak Forward Current, tp < 10 msec Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IF 200 Max mA IFSM mA 600 IFRM mA 300 Thermal Resistance, Junction−to−Ambient 10 mm2 pad, 1 oz. Cu 100 mm2 pad, 1 oz. Cu RqJA °C/W 285 216 Junction Temperature TJ −55 to °C 125 Storage Temperature Range Tstg −55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.