onsemi BAV74LT1
Monolithic Dual Switching Diode
| Part No. | BAV74LT1 |
|---|---|
| Datasheet | BAV74LT1 Download |
| Manufacturer |  onsemi |
| Description | Monolithic Dual Switching Diode |
| Buy | Stock & Price |
FEATURES
● Pb−Free Packages are Available ANODE 1 2 ANODEMAXIMUM RATINGS
(EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 50 200 500 Unit Vdc mAdc mAdc 3 CATHODE 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1), TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C JA M G G 1 556 mW mW/°C °C/W SOT−23 CASE 318 STYLE 9 Max Unit MARKING DIAGRAM Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in.
