onsemi BAV74LT1G
Monolithic Dual Switching Diode
FEATURES
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS CompliantMAXIMUM RATINGS
(EACH DIODE) Rating Symbol Value Unit Reverse Voltage Forward Current Peak Forward Surge Current VR 50 Vdc IF 200 mAdc IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board PD (Note 1), TA = 25°C 225 mW Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. 3 CATHODE DATA SHEET ANODE 1 2 ANODE 3 1 2 SOT−23 (TO−23...