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BAV74LT1G Datasheet PDF

onsemi BAV74LT1G

Monolithic Dual Switching Diode

Part No. BAV74LT1G
Datasheet BAV74LT1G Download
Manufacturer
onsemi
Description Monolithic Dual Switching Diode
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BAV74LT1G datasheet page 1 preview

FEATURES

● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MAXIMUM RATINGS

(EACH DIODE) Rating Symbol Value Unit Reverse Voltage Forward Current Peak Forward Surge Current VR 50 Vdc IF 200 mAdc IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board PD (Note 1), TA = 25°C 225 mW Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. 3 CATHODE DATA SHEET ANODE 1 2 ANODE 3 1 2 SOT−23 (TO−23...
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