onsemi BAW56WT1
Dual Switching Diode
| Part No. | BAW56WT1 |
|---|---|
| Datasheet | BAW56WT1 Download |
| Manufacturer |  onsemi |
| Description | Dual Switching Diode |
| Buy | Stock & Price |
FEATURES
● Pb−Free Package is Available CATHODE 1 2 CATHODE Symbol VR IF IFM(surge) Max 70 200 500 Unit V mA mA 3 1 ANODE 3MAXIMUM RATINGS
(TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current MARKING DIAGRAM Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. SC−70 CASE 419 STYLE 4 A1 M G G 1 2 THERMAL CHARACTERISTICS (TA = 25°C) Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 200 Unit mW A1 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location.
