onsemi BBL4001
N-Channel Power MOSFET
FEATURES
● ON-resistance RDS(on)1=4.7mΩ(typ.)● Input capacitance Ciss=6,900pF(typ.)
● 4V drive Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Junction Temperature Tj Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=30V, L=100μH, IAV=65A(Fig.1) *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C TO-220F-3SG Ratings 60 ±20 74 296 2.0 35 150 --55 to +150 370 65 Unit V V A A W W °C °C mJ A Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.ELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Symbol Conditions Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Gate Thr...