onsemi BC327G
Amplifier Transistors
| Part No. | BC327G |
|---|---|
| Datasheet | BC327G Download |
| Manufacturer |  onsemi |
| Description | Amplifier Transistors |
| Buy | Stock & Price |
FEATURES
● These are Pb−Free Devices*MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD Value −45 −50 −5.0 −800 625 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C PD 1.5 W 12 mW/°C TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. COLLECTOR 1 2 BASE 3 EMITTER TO−92 CASE 29 STYLE 17 123 STRAIGHT LEAD BULK PACK 1 2 3 BEN...
