onsemi BC635
High Current Transistors
| Part No. | BC635 |
|---|---|
| Datasheet | BC635 Download |
| Manufacturer |  onsemi |
| Description | High Current Transistors |
| Buy | Stock & Price |
FEATURES
● Pb−Free Packages are Available*MAXIMUM RATINGS
Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc BC635 45 BC637 60 BC639 80 Collector - Base Voltage VCBO Vdc BC635 45 BC637 60 BC639 80 Emitter - Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 5.0 Vdc 1.0 Adc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 800 mW 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Symbol RqJA Max 200 Unit °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid
