onsemi BCW68GL
PNP Silicon General Purpose Transistor
| Part No. | BCW68GL |
|---|---|
| Datasheet | BCW68GL Download |
| Manufacturer |  onsemi |
| Description | PNP Silicon General Purpose Transistor |
| Buy | Stock & Price |
FEATURES
● NSV Prefix for Automotive and OtherAPPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
Symbol Rating Value Unit VCEO Collector−Emitter Voltage −45 Vdc VCBO Collector−Base Voltage −60 Vdc VEBO Emitter−Base Voltage −5.0 Vdc IC Collector Current − Continuous −800 mAdc Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Characteristic Max Unit PD Total Device Dissipation FR−5 Board (Note 1) TA = 25C Derate above 25C 225 mW 1.8 mW/C RqJA Thermal Resistance, Junction−to−Ambient 556 C/W PD RqJA Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambient 300 mW 2.4 mW/C 417 C/W TJ, Tstg Junction and Storage Temperature −55 to +150 C 1.
