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BCW68G Datasheet PDF

onsemi BCW68G

This device is designed for general-purpose amplifier and switching applications at currents to 500 mA. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
Part No. BCW68G
Datasheet BCW68G Download
Manufacturer
onsemi
Description PNP Amplifier
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BCW68G datasheet page 1 preview

DESCRIPTION

Sourced from process 63. C E SOT-23 B Mark: DG Ordering Information Part Number BCW68G Marking DG Package SOT-23 3L Packing Method Tape and Reel

ABSOLUTE MAXIMUM RATINGS

(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO VCBO VEBO IC TJ , TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Junction and Storage Temperature Range -45 V -60 V -5 V -800 mA -55 to +150 °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty-cycle operations. © 1997 Semiconductor Components Industries, LLC. September-2017, Rev. 2 Publication Order Number: BCW68G/D BCW68G — PNP General-Purpose Amplifier Thermal Characteristics(3) Values are at TA = 25°C unless otherwise noted.
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