DESCRIPTION
Sourced from Process 10. ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted.) (Notes 1, 2) Symbol Parameter Value Unit VCEO VCBO VEBO IC TJ, TSTG Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Operating and Storage Junction Temperature Range 45 V 50 V 5.0 V 500 mA −55 to +150 °C Stresses exceeding those listed in the MAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. 2. These are steady−state limits. onsemi should be consulted on applications involving pulsed or low−duty−cycle operations. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) (Note 3) Symbol Parameter Max PD Total Device Dissipation 350 Derate Above 25°C 2.8 RθJA Thermal Resistance, 357 Junction−to−Ambient 3. Device mounted on FR−4 PCB 40 mm x 40 mm x 1.5 mm. Unit mW mW/_C _C/W DATA SHEET SOT−23 CASE 318 MARKING DIAGRAM 3 K1M G G 1 2 1.
onsemi
