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BD244C Datasheet PDF

onsemi BD244C

Complementary Silicon Plastic Power Transistors

Part No. BD244C
Datasheet BD244C Download
Manufacturer
onsemi
Description Complementary Silicon Plastic Power Transistors
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BD244C datasheet page 1 preview

FEATURES

● High Current Gain Bandwidth Product
● These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit Collector−Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO Vdc 80 100 Collector−Base Voltage BD243B, BD244B BD243C, BD244C VCB Vdc 80 100 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VEB 5.0 Vdc IC 6 Adc ICM 10 Adc IB 2.0 Adc PD 65 W 0.52 W/°C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Symbol RqJC Max 1.92 Unit °C/W DATA SHEET 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80−100 VOLTS 65 WATTS PNP COLLECTOR 2, 4 NPN COLLECTOR 2,...
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