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BD438G Datasheet PDF

onsemi BD438G

Plastic Medium Power Silicon PNP Transistor

  • Max Operating Temp : 150°C
  • Min Operating Temp : -55°C
Source: Octopart
Part No. BD438G
Datasheet BD438G Download
Manufacturer
onsemi
Description Plastic Medium Power Silicon PNP Transistor
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BD438G datasheet page 1 preview

FEATURES

● These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit Collector−Emitter Voltage BD436G BD438G BD440G BD442G VCEO Vdc 32 45 60 80 Collector−Base Voltage BD436G BD438G BD440G BD442G VCBO Vdc 32 45 60 80 Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25C Derate above 25C VEBO 5.0 Vdc IC 4.0 Adc IB 1.0 Adc PD 36 W 288 W/C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to + 150 C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol RqJC Max 3.5 Unit C/W DATA SHEET 4.0 AMP POWER TRANSISTORS PNP SILICON COLLECTOR 2, 4 BASE 3 EMITTER 1 TO−225 CASE 77−09 STYLE 1 123 MARKING DIAGRAM YWW BD4xxG Y WW BD4xx G = Year = Work Week = Device Code xx = 36, 36T...
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