onsemi BDV65B
NPN Transistor
| Part No. | BDV65B |
|---|---|
| Datasheet | BDV65B Download |
| Manufacturer |  onsemi |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
● High DC Current Gain − HFE = 1000 (min) @ 5 Adc● Monolithic Construction with Built−in Base Emitter Shunt Resistors
● These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous − Peak Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC IB PD TJ, Tstg Max 100 100 5.0 10 20 0.5 125 1.0 -65 to + 150 Unit Vdc Vdc Vdc Adc Adc W W/°C °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.0 °C/W Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
