onsemi C122B1
Silicon Controlled Rectifiers Reverse Blocking Thyristors
| Part No. | C122B1 |
|---|---|
| Datasheet | C122B1 Download |
| Manufacturer |  onsemi |
| Description | Silicon Controlled Rectifiers Reverse Blocking Thyristors |
| Buy | Stock & Price |
FEATURES
● Glass Passivated Junctions and Center Gate Fire for Greater●
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● Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 200 Volts Pb−Free Packages are Available* SCRs 8 AMPERES RMS 50 thru 200 VOLTS G A K
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = 25 to 100°C, Sine Wave, 50 to 60 Hz; Gate Open) C122F1 C122B1 On-State RMS Current (180° Conduction Angles; TC = 75°C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TC = 75°C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width = 10 ms, TC = 70°C) Forward Average Gate Power (t = 8.3 ms, TC = 70°C) Forward Peak Gate Current (Pulse Width = 10 ms, TC = 70°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 50 200 IT(RMS) ITSM 8.0 90 A A 1 2 TO−220AB CASE 221A STYLE 3 3 Value Unit V 4 MARKING...
