onsemi ECH8310
-30V -9A P-Channel Power MOSFET
FEATURES
● 4 V Drive● Halogen free compliance
● Protection diode in
● This Device is Pb−Free, Halogen Free and RoHS Compliant Specifications
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Symbol Parameter Conditions Ratings Unit VDSS Drain−to−Source Voltage −30 V VGSS Gate−to−Source Voltage ±20 V ID Drain Current (DC) −9 A IDP Drain Current PW ≤ 10 ms, −60 A (Pulse) duty cycle ≤ 1% PD Allowable Power When mounted 1.5 W Dissipation on ceramic substrate (900 mm2 X 0.8 mm) Tch Channel Temperature 150 °C Tstg Storage Temperature −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DATA SHEET SOT−28FL/ECH8 CASE 318BF ELECTRICAL CONNECTION 8 7 6 5 1 2 3 4 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain MARKING DIAGRAM JM Lot No. ORDERING INFORMATION Device ECH8310−TL−H Package SOT−28FL ECH8 (P...