onsemi ECH8315
This Power MOSFET is produced using onsemi’s trench technology, which is specifically designed to low on resistance. This devices is suitable for applications with low on resistance requirements.| Part No. | ECH8315 |
|---|---|
| Datasheet | ECH8315 Download |
| Manufacturer |  onsemi |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Low On−Resistance● 4 V Drive
● ESD Diode−Protected Gate
● Pb−Free, Halogen Free and RoHS Compliant Typical
APPLICATIONS
● Load Switch● Protection Switch for Lithium−ion Battery
● Motor Driver
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW ≤ 10 ms, duty cycle ≤ 1% VDSS −30 V VGSS ±20 V ID −7.5 A IDP −40 A Power Dissipation PD When mounted on ceramic substrate (900 mm2 x 0.8 mm) 1.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Parameter Junction to Ambient When mounted on ceramic substrate (900 mm2 x 0.8 mm) Symbol RθJA Value 83.3 Unit °C/W DATA SHEET VDSS −30 V RDS(on) Max 25 mW @ −10 V 44 mW...
