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FCA47N60-F109 - N-Channel MOSFET

Download the FCA47N60-F109 datasheet PDF. This datasheet also covers the FCA47N60 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SUPERFET MOSFET is onsemi’s first generation of high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 58 mW.
  • Ultra Low Gate Charge (Typ. Qg = 210 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 420 pF).
  • 100% Avalanche Tested.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FCA47N60-onsemi.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by onsemi

Part Number Description
FCA47N60 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, SUPERFET) 600 V, 47 A, 70 mW FCA47N60, FCA47N60-F109 Description SUPERFET MOSFET is onsemi’s first generation of high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 58 mW • Ultra Low Gate Charge (Typ. Qg = 210 nC) • Low Effective Output Capacitance (Typ. Coss(eff.