FCA47N60 - N-Channel MOSFET

onsemi

General Description

SUPERFET MOSFET is onsemi’s first generation of high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Key Features

650 V @ TJ = 150°C.
Typ. RDS(on) = 58 mW.
Ultra Low Gate Charge (Typ. Qg = 210 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 420 pF).
100% Avalanche Tested.

📥 Download Datasheet

FCA47N60 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FCA47N60
Manufacturer	onsemi
File Size	220.97 KB
Description	N-Channel MOSFET
Datasheet	FCA47N60 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FCA47N60	N-Channel MOSFET	Fairchild Semiconductor
FCA47N60F	600V N-Channel MOSFET	Fairchild Semiconductor
FCA47N60F	N-Channel MOSFET	ON Semiconductor
FCA47N60_F109	N-Channel MOSFET	Fairchild Semiconductor
FCA-125	25 AMPERES - SPDT	Tyco Electronics

Other Datasheets by onsemi

Part Number	Description
FCA47N60-F109	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MOSFET – N-Channel, SUPERFET) 600 V, 47 A, 70 mW FCA47N60, FCA47N60-F109 Description SUPERFET MOSFET is onsemi’s first generation of high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 58 mW • Ultra Low Gate Charge (Typ. Qg = 210 nC) • Low Effective Output Capacitance (Typ. Coss(eff.