FCA47N60 Datasheet | Fairchild Semiconductor

FCA47N60 / FCA47N60_F109 - N-Channel SuperFET® MOSFET FCA47N60 / FCA47N60_F109 N-Channel SuperFET® MOSFET 600 V, 47 A, 70 mΩ September 2017 Features - 650 V @ TJ = 150°C - Typ. RDS(on) = 58 mΩ - Ultra Low Gate Charge (Typ. Qg= 210 nC) - Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) - 100% Avalanche Tested Application - Solar Invertor - AC-DC Power Supply Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching...