onsemi FDC2512
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.| Part No. | FDC2512 |
|---|---|
| Datasheet | FDC2512 Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● 1.4 A, 150 V. RDS(ON) = 425 mW @ VGS = 10 V RDS(ON) = 475 mW @ VGS = 6 V● High Performance Trench Technology for Extremely Low RDS(ON)
● Low Gate Charge (8 nC Typ)
● High Power and Current Handling Capability
● Fast Switching Speed
● This is a Pb−Free and Halide Free Device
APPLICATIONS
● DC/DC ConverterABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS VGSS ID Drain−Source Voltage Gate−Source Voltage Drain Current −Continuous (Note 1a.) −Pulsed 150 V ±20 V A 1.4 8 EAS Single Pulse Avalanche Energy (Note 3) 13.5 mJ PD TJ, TSTG Maximum Power Dissipation (Note 1a.) (Note 1b.) Operating and Storage Junction Temperature Range W 1.6 0.8 −55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter RqJA Thermal Res...
