onsemi FDC3512
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.| Part No. | FDC3512 |
|---|---|
| Datasheet | FDC3512 Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● 3.0 A, 80 V ♦ RDS(ON) = 77 mW @ VGS = 10 V ♦ RDS(ON) = 88 mW @ VGS = 6 V● High Performance Trench Technology for Extremely Low RDS(ON)
● Low Gate Charge (13 nC Typical)
● High Power and Current Handling Capability
● Fast Switching Speed
● This Device is Pb−Free, Halide Free and is RoHS Compliant
APPLICATIONS
● DC/DC ConverterABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−Source Voltage 80 V VGSS Gate−Source Voltage ±20 V ID Drain Current Continuous (Note 1a) 3.0 A Pulsed 20 PD Maximum (Note 1a) Power Dissipation (Note 1b) 1.6 W 0.8 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit RqJA Thermal Resistance, Junction−to−Ambient (Note 1a) 78 °C/W RqJC Thermal Resistance, Junction−to−Case (Note 1) 30 °C/W 1.
