onsemi FDC604P
This P−Channel 1.8 V specified MOSFET uses onsemi’s low voltage POWERTRENCH process. It has been optimized for battery power management applications.| Part No. | FDC604P |
|---|---|
| Datasheet | FDC604P Download |
| Manufacturer |  onsemi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● −5.5 A, −20 V. RDS(ON) = 33 mW @ VGS = −4.5 V RDS(ON) = 43 mW @ VGS = −2.5 V RDS(ON) = 60 mW @ VGS = −1.8 V● Fast switching speed
● High Performance Trench Technology for Extremely Low RDS(ON)
● These Device is Pb−Free and Halogen Free
APPLICATIONS
● Battery Management● Load Switch
● Battery Protection
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS Drain−Source Voltage −20 V VGSS Gate−Source Voltage ±8 V ID Drain Current − Continuous − Pulsed (Note 1a) −5.5 A −20 PD Maximum Power Dissipation (Note 1a) 1.6 W (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 _C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS TA = 25°C unless otherwise noted Symbol Parameter Value Unit RθJA Thermal Resistance...
